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STD2N105K5

STD2N105K5 STMicroelectronics

en.DM00115979.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.38 EUR
5000+1.29 EUR
7500+1.25 EUR
12500+1.24 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STD2N105K5 STMicroelectronics

Description: MOSFET N-CH 1050V 1.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V.

Weitere Produktangebote STD2N105K5 nach Preis ab 1.36 EUR bis 4.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STD2N105K5 STD2N105K5 STMicroelectronics STD2N105K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 8Ω
Drain current: 0.95A
Power dissipation: 60W
Gate-source voltage: ±30V
Drain-source voltage: 1.05kV
Kind of channel: enhancement
Version: ESD
auf Bestellung 2242 Stücke:
Lieferzeit 14-21 Tag (e)
29+3.03 EUR
40+2.13 EUR
48+1.78 EUR
55+1.57 EUR
100+1.39 EUR
200+1.36 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STD2N105K5 STD2N105K5 STMicroelectronics std2n105k5-1850355.pdf MOSFETs N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in DPAK package
auf Bestellung 7392 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.62 EUR
10+3.01 EUR
100+2.39 EUR
250+2.37 EUR
500+2.05 EUR
1000+1.73 EUR
2500+1.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD2N105K5 STD2N105K5 STMicroelectronics en.DM00115979.pdf Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14568 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.69 EUR
10+3.01 EUR
100+2.06 EUR
500+1.65 EUR
1000+1.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STD2N105K5 STD2N105K5.pdf
STD2N105K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 8Ω
Drain current: 0.95A
Power dissipation: 60W
Gate-source voltage: ±30V
Drain-source voltage: 1.05kV
Kind of channel: enhancement
Version: ESD
auf Bestellung 2242 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+3.03 EUR
40+2.13 EUR
48+1.78 EUR
55+1.57 EUR
100+1.39 EUR
200+1.36 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STD2N105K5 std2n105k5-1850355.pdf
STD2N105K5
Hersteller: STMicroelectronics
MOSFETs N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in DPAK package
auf Bestellung 7392 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.62 EUR
10+3.01 EUR
100+2.39 EUR
250+2.37 EUR
500+2.05 EUR
1000+1.73 EUR
2500+1.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD2N105K5 en.DM00115979.pdf
STD2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 14568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.69 EUR
10+3.01 EUR
100+2.06 EUR
500+1.65 EUR
1000+1.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH