STD2N62K3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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Technische Details STD2N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V.
Weitere Produktangebote STD2N62K3 nach Preis ab 1.04 EUR bis 3.81 EUR
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STD2N62K3 | STMicroelectronics |
MOSFETs N-Ch 620V 3 Ohm 2.2A SuperMESH 3 |
auf Bestellung 2969 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
auf Bestellung 3841 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD2N62K3 | ST |
Transistor N-Channel MOSFET; 620V; 30V; 3,6Ohm; 2,2A; 45W; -55°C ~ 150°C; STD2N62K3 TSTD2N62K3 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STD2N62K3 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 620V 3 Ohm 2.2A SuperMESH 3
MOSFETs N-Ch 620V 3 Ohm 2.2A SuperMESH 3
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.77 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.21 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 1.04 EUR |
| STD2N62K3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Description: MOSFET N-CH 620V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
auf Bestellung 3841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.25 EUR |
| STD2N62K3 |
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Hersteller: ST
Transistor N-Channel MOSFET; 620V; 30V; 3,6Ohm; 2,2A; 45W; -55°C ~ 150°C; STD2N62K3 TSTD2N62K3
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 620V; 30V; 3,6Ohm; 2,2A; 45W; -55°C ~ 150°C; STD2N62K3 TSTD2N62K3
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.27 EUR |