
STD2N62K3 STMicroelectronics
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.74 EUR |
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Technische Details STD2N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V.
Weitere Produktangebote STD2N62K3 nach Preis ab 0.70 EUR bis 3.48 EUR
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
auf Bestellung 3882 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 4169 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2N62K3 | Hersteller : ST |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STD2N62K3 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STD2N62K3 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK; ESD Type of transistor: N-MOSFET Case: DPAK Drain-source voltage: 620V Drain current: 1A On-state resistance: 3.6Ω Power dissipation: 45W Polarisation: unipolar Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD2N62K3 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK; ESD Type of transistor: N-MOSFET Case: DPAK Drain-source voltage: 620V Drain current: 1A On-state resistance: 3.6Ω Power dissipation: 45W Polarisation: unipolar Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: SMD |
Produkt ist nicht verfügbar |