STD2NK100Z STMicroelectronics
Hersteller: STMicroelectronics
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
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Technische Details STD2NK100Z STMicroelectronics
Description: STMICROELECTRONICS - STD2NK100Z - Leistungs-MOSFET, n-Kanal, 1 kV, 1.85 A, 8.5 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 1kV, rohsCompliant: YES, Dauer-Drainstrom Id: 1.85A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3.75V, Verlustleistung: 70W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 8.5ohm.
Weitere Produktangebote STD2NK100Z nach Preis ab 0.96 EUR bis 6.78 EUR
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STD2NK100Z | STMicroelectronics |
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2NK100Z | STMicroelectronics |
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2NK100Z | STMicroelectronics |
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 1.85A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2NK100Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.16A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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STD2NK100Z | STMicroelectronics |
MOSFETs N-Channel 1000V Zener SuperMESH |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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STD2NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 1.85A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V |
auf Bestellung 3521 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: STMicroelectronics
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1 EUR |
| 5000+ | 0.96 EUR |
| STD2NK100Z |
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Hersteller: STMicroelectronics
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.86 EUR |
| 5000+ | 1.76 EUR |
| STD2NK100Z |
|
Hersteller: STMicroelectronics
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD2NK100Z STMicroelectronics Transistors MOSFETs N-CH 1KV 1.85A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.86 EUR |
| 5000+ | 1.73 EUR |
| STD2NK100Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.09 EUR |
| STD2NK100Z |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.65 EUR |
| 48+ | 1.8 EUR |
| 75+ | 1.42 EUR |
| 100+ | 1.37 EUR |
| 250+ | 1.26 EUR |
| STD2NK100Z |
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Hersteller: STMicroelectronics
MOSFETs N-Channel 1000V Zener SuperMESH
MOSFETs N-Channel 1000V Zener SuperMESH
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.37 EUR |
| 10+ | 4.14 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.26 EUR |
| 2500+ | 2.12 EUR |
| STD2NK100Z |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
auf Bestellung 3521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.78 EUR |
| 10+ | 4.4 EUR |
| 50+ | 3.39 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.49 EUR |