STD2NK90Z-1 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.38 EUR |
| 3000+ | 1.35 EUR |
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Technische Details STD2NK90Z-1 STMicroelectronics
Description: MOSFET N-CH 900V 2.1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.05A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V.
Weitere Produktangebote STD2NK90Z-1 nach Preis ab 1.51 EUR bis 4.26 EUR
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STD2NK90Z-1 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 900V 2.1A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.05A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V |
auf Bestellung 736 Stücke: Lieferzeit 10-14 Tag (e) |
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