STD35NF06T4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Technische Details STD35NF06T4 STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote STD35NF06T4 nach Preis ab 0.92 EUR bis 3.71 EUR
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STD35NF06T4 | STMicroelectronics |
MOSFETs N-Ch 60 Volt 35 Amp |
auf Bestellung 5545 Stücke: Lieferzeit 10-14 Tag (e) |
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STD35NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 35A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4211 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STD35NF06T4 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 60 Volt 35 Amp
MOSFETs N-Ch 60 Volt 35 Amp
auf Bestellung 5545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 0.92 EUR |
| STD35NF06T4 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 35A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.2 EUR |