STD3N62K3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details STD3N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD3N62K3 nach Preis ab 0.55 EUR bis 3 EUR
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STD3N62K3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2.7A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2302 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V |
auf Bestellung 3046 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3N62K3 | STMicroelectronics |
MOSFETs N-channel 620V, 2.7A SuperMESH Mosfet |
auf Bestellung 7700 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD3N62K3 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2.7A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2.7A; 45W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 2.7A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 1.07 EUR |
| 111+ | 0.77 EUR |
| 130+ | 0.65 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| STD3N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
auf Bestellung 3046 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.92 EUR |
| STD3N62K3 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 620V, 2.7A SuperMESH Mosfet
MOSFETs N-channel 620V, 2.7A SuperMESH Mosfet
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| 2500+ | 0.8 EUR |
| 5000+ | 0.79 EUR |