STD3NK50ZT4 STMicroelectronics
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.53 EUR |
| 5000+ | 0.47 EUR |
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Technische Details STD3NK50ZT4 STMicroelectronics
Description: MOSFET N-CH 500V 2.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.
Weitere Produktangebote STD3NK50ZT4 nach Preis ab 0.77 EUR bis 2.96 EUR
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 500V 2.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 2.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 2.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 500 Volt 2.3Amp Zener SuperMESH |
auf Bestellung 12480 Stücke: Lieferzeit 14-28 Tag (e) |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 2.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3NK50ZT4 Produktcode: 126951 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 500V Drain current: 1.45A On-state resistance: 3.3Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 2.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 2.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3NK50ZT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 500V Drain current: 1.45A On-state resistance: 3.3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |