STD3NM50T4

Description: MOSFET N-CH 550V 3A DPAK, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V.