STD45N10F7

STD45N10F7 STMicroelectronics


en.DM00081278.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
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Technische Details STD45N10F7 STMicroelectronics

Description: MOSFET N-CH 100V 45A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote STD45N10F7 nach Preis ab 0.86 EUR bis 2.53 EUR

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STD45N10F7 STD45N10F7 Hersteller : STMicroelectronics en.DM00081278.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 32A; Idm: 180A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: STripFET™ F7
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 18mΩ
Drain current: 32A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Pulsed drain current: 180A
Kind of channel: enhancement
auf Bestellung 1787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
44+1.63 EUR
50+1.43 EUR
61+1.19 EUR
70+1.03 EUR
100+0.9 EUR
500+0.86 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
STD45N10F7 STD45N10F7 Hersteller : STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A DPAK
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+1.98 EUR
100+1.36 EUR
500+1.06 EUR
1000+1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STD45N10F7 STD45N10F7 Hersteller : STMicroelectronics en.DM00081278.pdf MOSFETs Nchanl 100V 0013 Ohm typ 45 A Pwr MOSFET
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