STD47N10F7AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ 45 A STripFET F7 Power MOSFET i
auf Bestellung 22531 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.26 EUR |
| 14+ | 3.82 EUR |
| 100+ | 3.07 EUR |
| 250+ | 2.68 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 1.94 EUR |
| 2500+ | 1.87 EUR |
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Technische Details STD47N10F7AG STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V.
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STD47N10F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 45A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V |
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STD47N10F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 45A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V |
Produkt ist nicht verfügbar |