Weitere Produktangebote STD5NM50AG nach Preis ab 1.24 EUR bis 3.8 EUR
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STD5NM50AG | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 500V 7.5A DPAKTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD5NM50AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 7.5A DPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 2909 Stücke: Lieferzeit 10-14 Tag (e) |
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STD5NM50AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 500 V, 700 mOhm typ., 7.5 A MDmesh Power MOSFET in a |
auf Bestellung 5579 Stücke: Lieferzeit 10-14 Tag (e) |
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