STD65N160M9 STMicroelectronics
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.51 EUR |
| 10+ | 5.47 EUR |
| 25+ | 5.16 EUR |
| 100+ | 4.42 EUR |
| 250+ | 4.17 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.59 EUR |
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Technische Details STD65N160M9 STMicroelectronics
Description: N-CHANNEL 650 V, 132 MOHM TYP.,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V.
Weitere Produktangebote STD65N160M9 nach Preis ab 6.11 EUR bis 6.79 EUR
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STD65N160M9 | Hersteller : STMicroelectronics |
 Description: N-CHANNEL 650 V, 132 MOHM TYP.,Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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STD65N160M9 | Hersteller : STMicroelectronics |
Description: N-CHANNEL 650 V, 132 MOHM TYP., Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V |
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