STD65N160M9 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.01 EUR |
| 10+ | 4.32 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.67 EUR |
| 2500+ | 2.24 EUR |
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Technische Details STD65N160M9 STMicroelectronics
Description: N-CHANNEL 650 V, 132 MOHM TYP.,, Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD65N160M9 nach Preis ab 7.27 EUR bis 8.08 EUR
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STD65N160M9 | STMicroelectronics |
 Description: N-CHANNEL 650 V, 132 MOHM TYP.,Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.2V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD65N160M9 |
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Hersteller: STMicroelectronics
Description: N-CHANNEL 650 V, 132 MOHM TYP.,
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: N-CHANNEL 650 V, 132 MOHM TYP.,
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.08 EUR |
| 10+ | 7.27 EUR |