Technische Details STD70NH02LT4 ST
Description: MOSFET N-CH 24V 60A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD70NH02LT4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STD70NH02LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 24V 60A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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