STD70R1K3S STMicroelectronics
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Technische Details STD70R1K3S STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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STD70R1K3S | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STD70R1K3S | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD70R1K3S | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |