STD7N95K5AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 950 V, 0.95 Ohm typ., 9 A MDmesh K5 Power MOSFET in a
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.26 EUR |
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Produktbewertung abgeben
Technische Details STD7N95K5AG STMicroelectronics
Description: STMICROELECTRONICS - STD7N95K5AG - Leistungs-MOSFET, n-Kanal, 950 V, 9 A, 1.25 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 950V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5V, Verlustleistung: 110W, SVHC: No SVHC (05-Nov-2025), Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh K5 Series, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1.25ohm.
Weitere Produktangebote STD7N95K5AG nach Preis ab 2.32 EUR bis 7.4 EUR
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STD7N95K5AG | STMicroelectronics |
Description: DISCRETE Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
auf Bestellung 2177 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N95K5AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD7N95K5AG - Leistungs-MOSFET, n-Kanal, 950 V, 9 A, 1.25 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 950V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 110W SVHC: No SVHC (05-Nov-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh K5 Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1.25ohm |
auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: STMicroelectronics
Description: DISCRETE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: DISCRETE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.76 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.07 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.32 EUR |
| STD7N95K5AG |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD7N95K5AG - Leistungs-MOSFET, n-Kanal, 950 V, 9 A, 1.25 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 950V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 110W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.25ohm
Description: STMICROELECTRONICS - STD7N95K5AG - Leistungs-MOSFET, n-Kanal, 950 V, 9 A, 1.25 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 950V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 110W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.25ohm
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 7.4 EUR |
| 52+ | 4.5 EUR |
| 100+ | 3.13 EUR |