
STD7N95K5AG STMicroelectronics

Description: DISCRETE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 5.23 EUR |
10+ | 3.42 EUR |
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Technische Details STD7N95K5AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STD7N95K5AG nach Preis ab 2.06 EUR bis 5.26 EUR
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STD7N95K5AG | Hersteller : STMicroelectronics |
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auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N95K5AG | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STD7N95K5AG | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |