STD80N240K6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.07 EUR |
| 10+ | 6.95 EUR |
| 100+ | 5.11 EUR |
| 500+ | 5.01 EUR |
| 2500+ | 4.16 EUR |
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Technische Details STD80N240K6 STMicroelectronics
Description: N-CHANNEL 800 V, 197 MOHM TYP.,, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 105W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD80N240K6 nach Preis ab 5.12 EUR bis 10.31 EUR
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STD80N240K6 | STMicroelectronics |
Description: N-CHANNEL 800 V, 197 MOHM TYP., Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD80N240K6 |
|
Hersteller: STMicroelectronics
Description: N-CHANNEL 800 V, 197 MOHM TYP.,
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: N-CHANNEL 800 V, 197 MOHM TYP.,
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.31 EUR |
| 10+ | 7.09 EUR |
| 100+ | 5.12 EUR |