STD80N3LL STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD80N3LL STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD80N3LL nach Preis ab 0.49 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STD80N3LL | Hersteller : STMicroelectronics |
MOSFETs N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package |
auf Bestellung 3016 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
STD80N3LL | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
auf Bestellung 6597 Stücke: Lieferzeit 10-14 Tag (e) |
|