STD80N450K6 STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD80N450K6 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.38 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.38ohm
SVHC: No SVHC (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.07 EUR |
| 500+ | 3.83 EUR |
| 1000+ | 3.27 EUR |
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Technische Details STD80N450K6 STMICROELECTRONICS
Description: N-CHANNEL 800 V, 380 MOHM TYP.,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V.
Weitere Produktangebote STD80N450K6 nach Preis ab 2.83 EUR bis 8.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STD80N450K6 | STMicroelectronics |
Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD80N450K6 | STMicroelectronics |
MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package |
auf Bestellung 3362 Stücke: Lieferzeit 10-14 Tag (e) |
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STD80N450K6 | STMicroelectronics |
Description: N-CHANNEL 800 V, 380 MOHM TYP., Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V |
auf Bestellung 2460 Stücke: Lieferzeit 10-14 Tag (e) |
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STD80N450K6 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD80N450K6 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.38 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 83W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD80N450K6 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 800V 10A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 7.41 EUR |
| STD80N450K6 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
auf Bestellung 3362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.5 EUR |
| 10+ | 5.11 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 3.06 EUR |
| 2500+ | 2.83 EUR |
| STD80N450K6 |
|
Hersteller: STMicroelectronics
Description: N-CHANNEL 800 V, 380 MOHM TYP.,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V
Description: N-CHANNEL 800 V, 380 MOHM TYP.,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.08 EUR |
| 10+ | 5.33 EUR |
| 100+ | 3.76 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.87 EUR |
| STD80N450K6 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD80N450K6 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.38 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.38ohm
SVHC: No SVHC (23-Jan-2024)
Description: STMICROELECTRONICS - STD80N450K6 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.38 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.38ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 8.34 EUR |
| 43+ | 5.45 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.83 EUR |
| 1000+ | 3.27 EUR |