STD845DN40
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auf Bestellung 38000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STD845DN40
Description: TRANS 2NPN DUAL 400V 4A 8-DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 3W, Current - Collector (Ic) (Max): 4A, Voltage - Collector Emitter Breakdown (Max): 400V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A, Current - Collector Cutoff (Max): 250µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V, Supplier Device Package: 8-DIP.
Weitere Produktangebote STD845DN40
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STD845DN40 | STMicroelectronics |
Description: TRANS 2NPN DUAL 400V 4A 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 3W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V Supplier Device Package: 8-DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STD845DN40 | STMicroelectronics |
Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STD845DN40 |
|
Hersteller: STMicroelectronics
Description: TRANS 2NPN DUAL 400V 4A 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: 8-DIP
Description: TRANS 2NPN DUAL 400V 4A 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: 8-DIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STD845DN40 |
|
Hersteller: STMicroelectronics
Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat)
Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH