STD8N60DM2

STD8N60DM2 STMicroelectronics


en.DM00184996.pdf Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.43 EUR
10+1.72 EUR
100+1.17 EUR
500+0.94 EUR
1000+0.84 EUR
2500+0.74 EUR
5000+0.7 EUR
Mindestbestellmenge: 2
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Technische Details STD8N60DM2 STMicroelectronics

Description: MOSFET N-CH 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V.

Weitere Produktangebote STD8N60DM2 nach Preis ab 0.85 EUR bis 2.73 EUR

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STD8N60DM2 STD8N60DM2 Hersteller : STMicroelectronics en.DM00184996.pdf Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.74 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STD8N60DM2 STD8N60DM2 Hersteller : STMicroelectronics std8n60dm2.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
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STD8N60DM2 Hersteller : STMicroelectronics en.dm00184996.pdf Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
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STD8N60DM2 STD8N60DM2 Hersteller : STMicroelectronics en.DM00184996.pdf Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V
Produkt ist nicht verfügbar
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STD8N60DM2 Hersteller : STMicroelectronics en.DM00184996.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
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