Technische Details STD90N03L-1 ST
Description: MOSFET N-CH 30V 80A IPAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: IPAK.
Weitere Produktangebote STD90N03L-1
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STD90N03L-1 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V 80A IPAKVgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: IPAK |
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