STD95N2LH5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 25V 80A DPAK
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.05 EUR |
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Technische Details STD95N2LH5 STMicroelectronics
Description: MOSFET N-CH 25V 80A DPAK, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±22V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 70W (Tc).
Weitere Produktangebote STD95N2LH5 nach Preis ab 1.14 EUR bis 3.64 EUR
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STD95N2LH5 | Hersteller : STMicroelectronics |
MOSFET N-channel 25V 25V - 0.0037 |
auf Bestellung 2153 Stücke: Lieferzeit 10-14 Tag (e) |
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STD95N2LH5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 25V 80A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4904 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 27600 Stücke: Lieferzeit 21-28 Tag (e) |