STD9HN65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
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Technische Details STD9HN65M2 STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote STD9HN65M2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STD9HN65M2 | STM | MOSFET N-CH 650V 5.5A DPAK Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STD9HN65M2 |
Hersteller: STM
MOSFET N-CH 650V 5.5A DPAK Транзистори
MOSFET N-CH 650V 5.5A DPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD9HN65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 650V 5.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD9HN65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 650V 5.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH