Technische Details STE110NS20FD ST
Description: MOSFET N-CH 200V 110A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote STE110NS20FD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STE110NS20FD | Hersteller : SAMREX |
 MODULE |
auf Bestellung 167 Stücke: Lieferzeit 21-28 Tag (e) |
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STE110NS20FD Produktcode: 80105 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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STE110NS20FD | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 110A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
Produkt ist nicht verfügbar |