Technische Details STE26NA90 ST
Description: MOSFET N-CH 900V 26A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 1mA, Supplier Device Package: ISOTOP®, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Weitere Produktangebote STE26NA90
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STE26NA90 | Hersteller : SAMREX |
 MODULE |
auf Bestellung 94 Stücke: Lieferzeit 21-28 Tag (e) |
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STE26NA90 Produktcode: 39744 |
Transistoren > Transistoren IGBT, Leistungsmodule ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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STE26NA90 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 26A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 1mA Supplier Device Package: ISOTOP® Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
Produkt ist nicht verfügbar |
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STE26NA90 | Hersteller : STMicroelectronics |
MOSFET |
Produkt ist nicht verfügbar |