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STE40NK90ZD


STE40NK90ZD.pdf
Hersteller: ST
40A/900V/MOS/1U
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Technische Details STE40NK90ZD ST

Description: MOSFET N-CH 900V 40A ISOTOP, Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 826 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOTOP®, Vgs(th) (Max) @ Id: 4.5V @ 150µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: ISOTOP, Packaging: Tube.

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STE40NK90ZD STE40NK90ZD Hersteller : STMicroelectronics STE40NK90ZD.pdf Description: MOSFET N-CH 900V 40A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 826 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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