Technische Details STE45NK80ZD ST
Description: MOSFET N-CH 800V 45A ISOTOP, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOTOP®, Vgs(th) (Max) @ Id: 4.5V @ 150µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: ISOTOP, Packaging: Tube, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V.
Weitere Produktangebote STE45NK80ZD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| STE45NK80ZD | STM |
 ISOTOP Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STE45NK80ZD | STMicroelectronics |
Description: MOSFET N-CH 800V 45A ISOTOP Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 4.5V @ 150µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STE45NK80ZD |
|
Hersteller: STM
ISOTOP Транзистори
ISOTOP Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STE45NK80ZD |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 45A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Description: MOSFET N-CH 800V 45A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH