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STE45NK80ZD


en.CD00003692.pdf Hersteller: ST

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Technische Details STE45NK80ZD ST

Description: MOSFET N-CH 800V 45A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 150µA, Supplier Device Package: ISOTOP®, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V.

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STE45NK80ZD Hersteller : ST en.CD00003692.pdf 45A/800V/MOS/1U
auf Bestellung 211 Stücke:
Lieferzeit 21-28 Tag (e)
STE45NK80ZD STE45NK80ZD Hersteller : STMicroelectronics en.CD00003692.pdf Description: MOSFET N-CH 800V 45A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: ISOTOP®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 781 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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