STE48NM50 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 550V 48A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 69.86 EUR |
| 10+ | 62.09 EUR |
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Technische Details STE48NM50 STMicroelectronics
Description: MOSFET N-CH 550V 48A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Weitere Produktangebote STE48NM50 nach Preis ab 46.96 EUR bis 70.36 EUR
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STE48NM50 | Hersteller : STMicroelectronics |
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