STF10N105K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-220FP package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.28 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.98 EUR |
| 1000+ | 2.76 EUR |
| 2000+ | 2.59 EUR |
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Technische Details STF10N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Drain to Source Voltage (Vdss): 1050 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF10N105K5 nach Preis ab 7.58 EUR bis 7.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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STF10N105K5 | STMicroelectronics |
Description: MOSFET N-CH 1050V 6A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 1050 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STF10N105K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 1050V 6A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.58 EUR |


