STF10N62K3 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.65 EUR |
| 2000+ | 1.62 EUR |
| 5000+ | 1.55 EUR |
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Technische Details STF10N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 8.4A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V.
Weitere Produktangebote STF10N62K3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STF10N62K3 | STMicroelectronics |
 Description: MOSFET N-CH 620V 8.4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STF10N62K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 8.4A; Idm: 33.6A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 620V Drain current: 8.4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 42nC Kind of channel: enhancement Pulsed drain current: 33.6A Power dissipation: 30W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STF10N62K3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Description: MOSFET N-CH 620V 8.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STF10N62K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 8.4A; Idm: 33.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 8.4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
Pulsed drain current: 33.6A
Power dissipation: 30W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 8.4A; Idm: 33.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 8.4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 42nC
Kind of channel: enhancement
Pulsed drain current: 33.6A
Power dissipation: 30W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH