STF10NM60N
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
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| 50+ | 2.42 EUR |
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Technische Details STF10NM60N ST
Description: MOSFET N-CH 600V 10A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V.
Weitere Produktangebote STF10NM60N nach Preis ab 1.77 EUR bis 6.74 EUR
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STF10NM60N | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19nC Pulsed drain current: 32A |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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STF10NM60N | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V Mdmesh 8A |
auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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STF10NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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STF10NM60N Produktcode: 53892
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Lieblingsprodukt
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Hersteller : ST |
Transistoren > MOSFET N-CH Uds,V: 650 Idd,A: 10 Rds(on), Ohm: 0.55 Ciss, pF/Qg, nC: 540/19 |
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