| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 2.29 EUR |
| 100+ | 2.2 EUR |
| 1000+ | 2.01 EUR |
| 10000+ | 1.99 EUR |
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Technische Details STF11NM50N STMicroelectronics
Description: MOSFET N-CH 500V 8.5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V.
Weitere Produktangebote STF11NM50N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STF11NM50N | Hersteller : STMicroelectronics |
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auf Bestellung 998 Stücke: Lieferzeit 21-28 Tag (e) |
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STF11NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 8.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V |
Produkt ist nicht verfügbar |
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STF11NM50N | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 8.5A; Idm: 34A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 550V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 470mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |


