STF12N50DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.94 EUR |
| 50+ | 2.00 EUR |
| 100+ | 1.88 EUR |
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Technische Details STF12N50DM2 STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V.
Weitere Produktangebote STF12N50DM2 nach Preis ab 1.40 EUR bis 4.24 EUR
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STF12N50DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 500 V, 0.299 Ohm typ 11 A MDmesh DM2 Power MOSFET |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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| STF12N50DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.35Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF12N50DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.35Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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STF12N50DM2 Produktcode: 181822
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Transistoren > MOSFET N-CH |
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STF12N50DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STF12N50DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |