Weitere Produktangebote STF12N50DM2 nach Preis ab 1.48 EUR bis 5.28 EUR
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STF12N50DM2 | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 16nC Drain current: 11A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±25V On-state resistance: 0.35Ω Pulsed drain current: 44A |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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STF12N50DM2 | STMicroelectronics |
MOSFETs N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack |
auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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STF12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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| STF12N50DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.12 EUR |
| 43+ | 2.02 EUR |
| 48+ | 1.78 EUR |
| 50+ | 1.71 EUR |
| STF12N50DM2 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
MOSFETs N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.19 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.7 EUR |
| 2000+ | 1.58 EUR |
| 5000+ | 1.48 EUR |
| STF12N50DM2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.28 EUR |
| 50+ | 2.61 EUR |
| 100+ | 2.34 EUR |