Weitere Produktangebote STF12N50DM2 nach Preis ab 1.37 EUR bis 4.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STF12N50DM2 | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 16nC On-state resistance: 0.35Ω Kind of channel: enhancement Drain current: 11A Pulsed drain current: 44A Gate-source voltage: ±25V Drain-source voltage: 500V |
auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
STF12N50DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
STF12N50DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 365 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| STF12N50DM2 | Hersteller : STM |
N-Channel 500V 11A (Tc) 25W (Tc) Through Hole TO-220FP Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |