
STF12N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 2.78 EUR |
50+ | 1.34 EUR |
100+ | 1.28 EUR |
500+ | 1.01 EUR |
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Technische Details STF12N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 9A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V.
Weitere Produktangebote STF12N60M2 nach Preis ab 0.90 EUR bis 2.83 EUR
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STF12N60M2 | Hersteller : STMicroelectronics |
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auf Bestellung 2093 Stücke: Lieferzeit 10-14 Tag (e) |
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STF12N60M2 | Hersteller : STMicroelectronics |
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STF12N60M2 | Hersteller : STMicroelectronics |
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STF12N60M2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 36A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF12N60M2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 36A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |