STF13N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag
| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.28 EUR |
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Technische Details STF13N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V.
Weitere Produktangebote STF13N65M2 nach Preis ab 1.46 EUR bis 4.12 EUR
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STF13N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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