STF13N80K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 45+ | 3.95 EUR |
| 50+ | 3.87 EUR |
| 100+ | 3.44 EUR |
| 500+ | 2.78 EUR |
Produktrezensionen
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Technische Details STF13N80K5 STMicroelectronics
Description: STMICROELECTRONICS - STF13N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.37 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 35W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh K5, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.37ohm.
Weitere Produktangebote STF13N80K5 nach Preis ab 2.63 EUR bis 12.29 EUR
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STF13N80K5 | STMicroelectronics |
 Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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STF13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMESH5™ |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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STF13N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 890 Stücke: Lieferzeit 10-14 Tag (e) |
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STF13N80K5 | STMicroelectronics |
MOSFETs N-Ch 800 V 0.37 Ohm 12 A Zener-protect |
auf Bestellung 1923 Stücke: Lieferzeit 10-14 Tag (e) |
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STF13N80K5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STF13N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.37 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 35W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh K5 productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.37ohm |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF13N80K5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 3.95 EUR |
| 50+ | 3.78 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.63 EUR |
| STF13N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.69 EUR |
| 24+ | 3.56 EUR |
| STF13N80K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.26 EUR |
| 50+ | 4.78 EUR |
| 100+ | 4.36 EUR |
| 500+ | 3.59 EUR |
| STF13N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 800 V 0.37 Ohm 12 A Zener-protect
MOSFETs N-Ch 800 V 0.37 Ohm 12 A Zener-protect
auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.82 EUR |
| 10+ | 6.43 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.02 EUR |
| 1000+ | 3.72 EUR |
| 2000+ | 3.5 EUR |
| STF13N80K5 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STF13N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.37 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 35W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.37ohm
Description: STMICROELECTRONICS - STF13N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.37 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 35W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.37ohm
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 12.29 EUR |
| 29+ | 8.03 EUR |