STF16N60M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 50+ | 1.36 EUR |
| 100+ | 1.34 EUR |
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Technische Details STF16N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 12A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.
Weitere Produktangebote STF16N60M2 nach Preis ab 1.17 EUR bis 4.05 EUR
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STF16N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220FP package |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
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| STF16N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF16N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 48A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |