STF16N60M2 STMicroelectronics
auf Bestellung 1008 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.51 EUR |
| 18+ | 3.04 EUR |
| 100+ | 2.68 EUR |
| 250+ | 2.3 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.17 EUR |
| 2000+ | 2.13 EUR |
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Technische Details STF16N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 12A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.
Weitere Produktangebote STF16N60M2 nach Preis ab 3.11 EUR bis 4.71 EUR
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STF16N60M2 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 12A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
auf Bestellung 163 Stücke: Lieferzeit 21-28 Tag (e) |
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STF16N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
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| STF16N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
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STF16N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 48A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 48A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STF16N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 48A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 48A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |