Technische Details STF16N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V.
Weitere Produktangebote STF16N65M2 nach Preis ab 1.31 EUR bis 4.24 EUR
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STF16N65M2 | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 19.5nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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STF16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 969 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STF16N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 33+ | 2.17 EUR |
| STF16N65M2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.19 EUR |
| 50+ | 2.06 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.49 EUR |
| STF16N65M2 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.37 EUR |
| 2000+ | 1.31 EUR |
| STF16N65M2 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)