STF21N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 5.99 EUR |
14+ | 5.39 EUR |
18+ | 4.13 EUR |
19+ | 3.9 EUR |
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Technische Details STF21N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 17A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Weitere Produktangebote STF21N65M5 nach Preis ab 3.9 EUR bis 11.39 EUR
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STF21N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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STF21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
auf Bestellung 998 Stücke: Lieferzeit 21-28 Tag (e) |
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STF21N65M5 | Hersteller : STMicroelectronics | MOSFET N-channel 650 V 0.175 17A MDmesh |
auf Bestellung 985 Stücke: Lieferzeit 14-28 Tag (e) |
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STF21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF21N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |