Technische Details STF21NM50N STM
Description: MOSFET N-CH 500V 18A TO220FP, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc).
Weitere Produktangebote STF21NM50N
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| STF21NM50N | STM |
 N-кан. MOSFET 550V, 18A, 0.15 Ом, 214Вт, TO-220F Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STF21NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STF21NM50N | STMicroelectronics |
MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STF21NM50N |
|
Hersteller: STM
N-кан. MOSFET 550V, 18A, 0.15 Ом, 214Вт, TO-220F Транзистори
N-кан. MOSFET 550V, 18A, 0.15 Ом, 214Вт, TO-220F Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF21NM50N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 18A TO220FP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Description: MOSFET N-CH 500V 18A TO220FP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STF21NM50N |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh
MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH