STF23NM50N STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 6.78 EUR |
| 100+ | 5.59 EUR |
| 500+ | 4.84 EUR |
| 1000+ | 4.46 EUR |
| 2000+ | 4.36 EUR |
| 5000+ | 4.16 EUR |
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Technische Details STF23NM50N STMicroelectronics
Description: MOSFET N-CH 500V 17A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF23NM50N
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STF23NM50N | STMicroelectronics |
 Description: MOSFET N-CH 500V 17A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STF23NM50N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Drain-source voltage: 500V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement Polarisation: unipolar Version: ESD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STF23NM50N | STMicroelectronics |
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STF23NM50N | STMicroelectronics |
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STF23NM50N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 17A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 17A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF23NM50N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Version: ESD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF23NM50N |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STF23NM50N |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH