STF23NM60ND STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 9.96 EUR |
| 10+ | 8.36 EUR |
| 25+ | 7.88 EUR |
| 100+ | 6.76 EUR |
| 250+ | 6.39 EUR |
| 500+ | 6 EUR |
| 1000+ | 5.16 EUR |
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Technische Details STF23NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 19.5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
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STF23NM60ND | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 19.5A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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