Technische Details STF25N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 19A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V.
Weitere Produktangebote STF25N10F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STF25N10F7 | Hersteller : STMicroelectronics |
 MOSFET Nchanl 100V 0025 Ohm typ 25 A Pwr MOSFET |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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STF25N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF25N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 19A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
Produkt ist nicht verfügbar |