Technische Details STF25N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 19A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF25N10F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| STF25N10F7 | Hersteller : STMicroelectronics |
 MOSFET Nchanl 100V 0025 Ohm typ 25 A Pwr MOSFET |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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STF25N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 19A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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