STF26N60DM6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
auf Bestellung 979 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.44 EUR |
| 10+ | 7.93 EUR |
| 350+ | 6.06 EUR |
| 700+ | 5.7 EUR |
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Technische Details STF26N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V.
Weitere Produktangebote STF26N60DM6
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STF26N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
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| STF26N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
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STF26N60DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
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STF26N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 11A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 60A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.195Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STF26N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 11A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 60A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.195Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
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