STF28NM60ND

STF28NM60ND STMicroelectronics


sgst_s_a0000093292_1-2282581.pdf
Hersteller: STMicroelectronics
MOSFET Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET
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Lieferzeit 10-14 Tag (e)
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1+13.31 EUR
10+11.4 EUR
25+10.35 EUR
100+9.5 EUR
250+8.96 EUR
500+8.38 EUR
1000+7.55 EUR
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Technische Details STF28NM60ND STMicroelectronics

Description: MOSFET N-CH 600V 23A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

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STF28NM60ND STF28NM60ND Hersteller : STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Description: MOSFET N-CH 600V 23A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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