STF2LN60K3 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 2+ | 1.49 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.58 EUR |
| 5000+ | 0.54 EUR |
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Technische Details STF2LN60K3 STMicroelectronics
Description: MOSFET N CH 600V 2A TO-220FP, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STF2LN60K3 | Hersteller : STMicroelectronics |
 Description: MOSFET N CH 600V 2A TO-220FPGate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V |
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