STF33N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220FP package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.65 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 3.27 EUR |
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10-14 Tag (e)
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Technische Details STF33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.
Weitere Produktangebote STF33N65M2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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STF33N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: THT Gate charge: 41.5nC Kind of channel: enhancement Pulsed drain current: 96A Kind of package: tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STF33N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 41.5nC
Kind of channel: enhancement
Pulsed drain current: 96A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 41.5nC
Kind of channel: enhancement
Pulsed drain current: 96A
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)