STF33N65M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 388 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.15 EUR |
| 10+ | 7.7 EUR |
| 100+ | 6.23 EUR |
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Technische Details STF33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.
Weitere Produktangebote STF33N65M2 nach Preis ab 4.94 EUR bis 9.57 EUR
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auf Bestellung 128 Stücke: Lieferzeit 14-28 Tag (e) |
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Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP Tube |
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STF33N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP Tube |
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STF33N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 96A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: THT Gate charge: 41.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STF33N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 96A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: THT Gate charge: 41.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |