Technische Details STF34NM60N STMicroelectronics
Description: MOSFET N-CH 600V 31.5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote STF34NM60N
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STF34NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 31.5A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V Package / Case: TO-220-3 Full Pack Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 31.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
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STF34NM60N | Hersteller : STMicroelectronics |
MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR MO |
Produkt ist nicht verfügbar |


