STF36N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 11.23 EUR |
| 10+ | 7.59 EUR |
| 100+ | 5.52 EUR |
| 500+ | 4.64 EUR |
| 1000+ | 4.36 EUR |
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Technische Details STF36N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 30A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.
Weitere Produktangebote STF36N60M6 nach Preis ab 4.95 EUR bis 11.37 EUR
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STF36N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220FP package |
auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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STF36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 102A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |

