STF3N80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 50+ | 2.05 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |
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Technische Details STF3N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220FP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STF3N80K5 | Hersteller : STMicroelectronics |
MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protected |
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